APTGLQ400A120T6G APTGLQ400A120T6G C rev 2 july, 2016 www.microsemi.com 1 C 6 q2 0/vbus q1 vbus out g1g2 e2 e1 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings (per igbt) symbol parameter max ratings unit v ces collector - emitter voltage 1200 v i c continuous collector current t c = 25c 625 a t c = 80c 400 i cm pulsed collector current t c = 25c 1250 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 1900 w rbsoa reverse bias safe operating area t j = 125c 800a @ 1100v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? high speed trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - soft recovery parallel diodes - low diode vf - rbsoa and scsoa rated ? kelvin source for easy drive ? very low stray inductance ? m5 power connectors ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant phase leg high speed trench + field stop igbt4 power module v ces = 1200v i c = 400a @ tc = 80c downloaded from: http:///
APTGLQ400A120T6G APTGLQ400A120T6G C rev 2 july, 2016 www.microsemi.com 2 C 6 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 200 a v ce(sat) collector emitter saturation voltage v ge = 15v i c = 400a t j = 25c 2.05 2.4 v t j = 150c 2.6 v ge ( th ) gate threshold voltage v ge = v ce , i c = 14 ma 5.2 5.8 6.4 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 680 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 24.6 nf c oes output capacitance 1.4 c res reverse transfer capacitance 1.2 q g gate charge v ge = 15v ; v ce =960v i c =400a 1800 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v ce = 600v i c = 400a r g = 1.25 30 ns t r rise time 57 t d(off) turn-off delay time 290 t f fall time 16 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v ce = 600v i c = 400a r g = 1.25 30 ns t r rise time 49 t d(off) turn-off delay time 366 t f fall time 48 e on turn-on switching energy v ge = 15v v ce = 600v i c = 400a r g = 1.25 t j = 150c 36 mj e off turn-off switching energy t j = 150c 22 mj i sc short circuit data v ge 15v ; v bus = 600v t p 10s ; t j = 150c 1400 a r thjc junction to case thermal resistance 0.08 c/w diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm repetitive reverse voltage 1200 v i rm reverse leakage current v r =1200v 250 a i f dc forward current t c = 50c 400 a v f diode forward voltage i f = 400a v ge = 0v t j = 25c 1.9 2.2 v t j = 150c 1.85 t rr reverse recovery time i f = 400a v r = 600v di/dt = 7000a/s t j = 25c 155 ns t j = 150c 300 q rr reverse recovery charge t j = 25c 37.2 c t j = 150c 78 e r reverse recovery energy t j = 25c 16 mj t j = 150c 32 r thjc junction to case thermal resistance 0.14 c/w downloaded from: http:///
APTGLQ400A120T6G APTGLQ400A120T6G C rev 2 july, 2016 www.microsemi.com 3 C 6 temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m for teminals m5 2 3.5 wt package weight 300 g package outline (dimensions in mm) see application note apt0601 - mounting instructio ns for sp6 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGLQ400A120T6G APTGLQ400A120T6G C rev 2 july, 2016 www.microsemi.com 4 C 6 typical performance curve t j =25c t j =150c 0 200 400 600 800 0.511.522.533.54 i c (a) v ce (v) output characteristics (v ge =15v) v ge =9v v ge =13v v ge =15v v ge =20v 0 100 200 300 400 500 600 700 800 0123456 i c (a) v ce (v) output characteristics t j = 150c t j =25c t j =150c 0 100 200 300 400 500 600 700 800 56789101112 i c (a) v ge (v) trans fert characteristics eon eof f er 0 20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 e ( m j ) i c (a) energy losses vs collector current v ce = 600v v ge = 15v r g = 1.25 ? t j = 150c eon eof f er 20 30 40 50 60 0 1.25 2.5 3.75 5 e ( m j ) gate resistance (ohms) v ce = 600v v ge =15v i c = 400a t j = 150c sw itching energy losses vs gate resistance 0 200 400 600 800 1000 0 300 600 900 1200 i c (a) v ce (v) reverse bias safe operating area v ge =15v t j =150c r g =1.25 ? d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 the r mal im pedance (c/w) rectangular pulse duration (seconds) m axim um effective transient thermal impedance, junction to case vs pulse d uration igbt downloaded from: http:///
APTGLQ400A120T6G APTGLQ400A120T6G C rev 2 july, 2016 www.microsemi.com 5 C 6 hard switching zcs zvs 0 40 80 120 160 200 0 100 200 300 400 500 600 fm ax, operating frequency (khz) i c (a) v ce =600v d=50% r g =1.25 ? t j =150c t c =75c operating frequency vs collector current d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) m axim um effective transient thermal impedance, junction to case vs pul se duration diode t j =25c t j =150c 0 200 400 600 800 0 0.5 1 1.5 2 2.5 i f (a) v f (v) forw ard characteristic of diode v ce =240v v ce =960v 0 2 4 6 8 10 12 14 16 0 400 800 1200 1600 2000 v ge (v) gate charge (nc) typical gate charge i c = 400a downloaded from: http:///
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